3 edition of Two-Color Photodetector Using an Asymmetric Quantum Well Structure found in the catalog.
Two-Color Photodetector Using an Asymmetric Quantum Well Structure
by Storming Media
Written in English
|The Physical Object|
Addressed to both students as a learning text and scientists/engineers as a reference, this book discusses the physics and applications of quantum-well infrared photodetectors (QWIPs). It is assumed that the reader has a basic background in quantum mechanics, solid . Two color photodetector using an asymmetric quantum well structure. California: Naval Postgraduate School, Monterey; (PhD thesis). [Google Scholar] Varshni YP. Temperature dependence of the energy gap in semiconductors. Physica. ; – doi: /(67) [Google Scholar].
We have demonstrated a two-contact quantum well infrared photodetector (QWIP) exhibiting simultaneous photoresponse in both the mid- and the long-wavelength atmospheric windows of 3–5 μm and of 8–12 μm. The structure of the device was achieved by sequentially growing a mid-wavelength QWIP part followed by a long-wavelength QWIP part separated by an n-doped layer. . The Physics of Emission-RecomBination in Multiquantum Well Structures.- Physics of Single Quantum Well Infrared Photodetectors.- A Three-color Voltage TunaBle Quantum Well IntersuBBand Photodetector for Long Wavelength Infrared.- Multi? Controlled Operation of Quantum Well IR Detectors Using Electric Field Switching and Rearrangement
Abstract: We report the design, fabrication and characterization of a II-VI ZnCdSe / ZnCdMgSe-based quantum well infrared photodetector (QWIP) with a bound to quasi-bound transition centered at µm. The good growth quality of the epitaxial layers was verified by xray diffraction measurements. Symmetric and asymmetric multiple quantum well structures MQWs for light-emitting applications. One of the important considera-tions in the design and fabrication of these MQW structures is to obtain maximum quantum eﬃciency, i.e., to maximize the optical emission from the conﬁned states in the well regions and to minimize the optical.
Pamphlets on art.
Uncertain Inheritance, An
An Essay of a frame of government for Pennsylvania.
Oxford Reviews of Reproductive Biology: Volume 13
Art and design education in the region.
North Carolina guidebook for registers of deeds
Alchemy of herbs
Holt Science & Technology
American concept of leadership.
FMC authorization, fiscal year 1991
Creativity and religious development: toward a structural-functional psychology of religion
Society of Pewter Collectors
The Oxford group movement
Chinese minority in Southeast Asia
Two color photodetector using an asymmetric quantum well structure by Lantz, Kevin R. TWO-COLOR PHOTODETECTOR USING AN ASYMMETRIC QUANTUM WELL STRUCTURE Kevin R. Lantz Ensign, United States Navy B.S., The Ohio State University, Submitted in partial fulfillment of the requirements for the degree of MASTER OF SCIENCE IN APPLIED PHYSICS from the NAVAL POSTGRADUATE SCHOOL June Author: Kevin R.
Lantz. Download Citation | Two-Color Photodetector Using an Asymmetric Quantum Well Structure | The past twenty years have seen an explosion in the realm of infrared detection technology fueled by.
Published Physics, Materials Science. Applied Physics Letters. A two-color quantum-well infrared photodetector with voltage tunable detection peaks is demonstrated. It is based on electron transfer between two asymmetric coupled quantum wells under an applied bias.
Enter the password to open this PDF file: Cancel OK. File name:. provided: 1) a structure of three coupled quantum wells, 2) a two-color asymmetric quantum well infrared photodetector design and 3) a quantum cascade laser design. SIMULATION APPROACH Nowadays, heterostructures are the primary construction components of most advanced semiconductor devices being manufactured.
They are required elements for. A two-color quantum-well infrared photodetector with voltage tunable detection peaks is demonstrated. It is based on electron transfer between two asymmetric coupled quantum wells under an applied bias.
At 10 K, the peak detection wavelength is μm for positive bias when the electrons reside in one of the wells, and switches to μm at a large negative bias when the electrons are. Three simulation examples were performed on: three coupled quantum wells structure, two-color asymmetric quantum well infrared photodetector structure and on a quantum cascade laser design.
The results show an accuracy which is comparable to more complicated simulations. Asymmetric Quantum-well structure 8 Thesis Outline 12 Chapter 2 Optical Absorption in Quantum Wells 16 Infrared Photodetection 17 Traditional interband based detectors and intraband QWIPs 20 Quantum well Infrared Photodetector (QWIP) 23 Intersubband absorption between bound states 25 Asymmetric Quantum Well oscillations from just such asymmetric quantum well structures have been reported , which make use of both standard types of solutions (both the E>V 0 and E.
By using highly doped InGaAs quantum wells, grating-free two color quantum well infrared photodetectors with large normal incidence responses have been demonstrated. Two different structures were used for different voltage tuning characteristics. A dual-band multiple quantum well infrared photodetector has been fabricated for the near and mid-infrared detection.
The structure consists of InGaAs/GaAs step quantum wells separated by. The QWIP consists of two stacks of multiple quantum wells (MQWs), each sensitive in one of the atmospheric infrared transmission windows and each with a separate readout circuit.
High optical coupling efficiency is obtained in both wavelength ranges, demonstrating the use of the corrugated structure for two-color detection.
Abstract. In this study, photomodulated reflectance (PR) technique was employed on two different quantum well infrared photodetector (QWIP) structures, which consist of n-doped GaAs quantum wells (QWs) between undoped Al x Ga 1−x As barriers with three different x compositions. Therefore, the barrier profile is in the form of a staircase-like barrier.
Two-colour quantum well infra-red photodetector with peak sensitivities at and km K.L. Tsai, C.P. Lee, J.S. Tsang and H.R. Chen Indexing terms: Infro-red drrertors, Infra-red imaging, Image sensors. Semiconductor quantum wells A two-colour infra-red photodetector using multistacks of GaAsi AlGaAs quantum wells is demonstrated.
The response peaks are. Quantum well infrared photodetectors (QWIP; Gunapala et al., ; Levine, ; Liu et al., ; Rogalski, ), using intersubband absorption in quantum wells, are well-established as a technology and are commercially available in large format focal plane arrays (FPA; Gunapala et al., ), due to a mature and relatively inexpensive III-V epitaxial growth and fabrication technology.
Advanced structures like quantum well (QW) and quantum dot infrared photodetectors (QDIPs) have been built using resonant cavity enhancement to improve their performance. Different materials have been applied for these structures of photodetectors that results in a broad wavelength region for each type of photodetector.
Addressed to both students as a learning text and scientists/engineers as a reference, this book discusses the physics and applications of quantum-well infrared photodetectors (QWIPs).
It is assumed that the reader has a basic background in quantum mechanics, solid-state physics, and semiconductor. In this study, photomodulated reflectance (PR) technique was employed on two different quantum well infrared photodetector (QWIP) structures, which consist of n-doped GaAs quantum wells (QWs) between undoped Al x Ga 1−x As barriers with three different x compositions.
Therefore, the barrier profile is in the form of a staircase-like barrier. A simulator was developed for modeling and designing multiple quantum wells structures such as quantum well infrared photodetectors and quantum cascade laser, based on a single-electron effective mass Schrödinger equation.
It employs box integration finite differences and transfer matrix approaches to find energies of bound and scattering states in the structures. However, its wide spread use was impeded by the scarcity of the imaging systems and its high cost.
Recently, there is an emerging infrared technology based on quantum well intersubband transition in III-V compound semiconductors.
Concept of our device structure. The photodetector developed in the present work has an n–i–n structure. The top and the bottom layers are n. In quantum mechanics, the asymmetric quantum well is a model of a particle moving in a one-dimensional potential given by Solving the Schrodinger’s equation for this system and applying.